Автор |
C Juhasz |
Автор |
S O Kasap |
Дата выпуска |
1985-04-14 |
dc.description |
Time-of-flight drift mobility experiments have been carried out on evaporated films of amorphous (a-)Se<sub>0.995</sub>As<sub>0.005</sub> with chlorine as an additive up to approximately 70 at.ppm; drift mobility has been measured as a function of temperature at various applied fields. It is shown that shallow hole traps at approximately 0.45 eV in a-Se, introduced by Cl, are diminished by addition of 0.5% As and that the hole transport in this system is similar to that in pure a-Se. Electron transport, which is trap-limited in Cl-doped a-Se, is restored by light alloying with As. The mobility activation energy increases sharply with addition of even a fraction of a per cent of As. Doping a-Se<sub>0.995</sub>As<sub>0.005</sub> with Cl leaves the electron transport relatively unaffected. The experimental data have been critically analysed within the framework of trap-controlled transport mechanisms. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Charge transport in amorphous xerographic photoreceptor films of chlorine-doped Se<sub>0.995</sub>As<sub>0.005</sub> |
Тип |
paper |
DOI |
10.1088/0022-3727/18/4/016 |
Electronic ISSN |
1361-6463 |
Print ISSN |
0022-3727 |
Журнал |
Journal of Physics D: Applied Physics |
Том |
18 |
Первая страница |
721 |
Последняя страница |
729 |
Аффилиация |
C Juhasz; Dept. of Electr. Eng., Imperial Coll. of Sci. & Technol., London, UK |
Аффилиация |
S O Kasap; Dept. of Electr. Eng., Imperial Coll. of Sci. & Technol., London, UK |
Выпуск |
4 |