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Автор V Shrinet
Автор U K Chaturvedi
Автор A K Nigam
Дата выпуска 1986-06-14
dc.description The production of radial stress channels in the unimplanted zone but along the boundary of the circular beam spot of Mylar surface implanted at H<sup>+</sup> ion energy >or=350 keV has been explained on the basis of severe local temperature rise due to beam heating. On account of this temperature rise the irradiated zone melts and the radial channels are generated due to radial compressive stress along the boundary on cooling. The sharp decrease in the critical dose for the onset of blistering with a beam energy is attributed to the increase in gaseous diffusivity of evolved gases with local temperature rise which results in a faster coalescence of gas and earlier blistering.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Role of local temperature rise in stress channel production due to ≥350 keV proton implantation on Mylar surface
Тип paper
DOI 10.1088/0022-3727/19/6/028
Electronic ISSN 1361-6463
Print ISSN 0022-3727
Журнал Journal of Physics D: Applied Physics
Том 19
Первая страница 1141
Последняя страница 1147
Аффилиация V Shrinet; Dept. of Phys., Banaras Hindu Univ., Varanasi, India
Аффилиация U K Chaturvedi; Dept. of Phys., Banaras Hindu Univ., Varanasi, India
Аффилиация A K Nigam; Dept. of Phys., Banaras Hindu Univ., Varanasi, India
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