| Автор | Liu Chun-rong |
| Автор | Liu Ling |
| Дата выпуска | 1989-08-14 |
| dc.description | Anodisation of a germanium surface was carried out successfully in oxygen plasma excited by a high-frequency (500 kHz) electromagnetic field in a quartz reactor. The refractive index of the oxygen plasma anodised (OPA) film on Ge(111) is generally 1.66-1.68 ( lambda =6328 AA). The chemical composition and chemical states of the Ge-OPA film have been analysed using Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) with argon ion sputtering. There is GeO<sub>2</sub> on the surface of the OPA film. In the bulk of the OPA film, there is mainly GeO<sub>2</sub> and some unoxidised germanium. The distribution of O and Ge is fundamentally homogeneous in the bulk. There are double peaks for Ge(3d) in the XPS of the Ge-OPA film after argon ion sputtering. The binding energy of 32.7 eV is due to the Ge in GeO<sub>2</sub>, and that of 29.2 eV corresponds to a few unoxidised Ge atoms in the OPA film. The chemical stoichiometry of the OPA film is very similar to that of vitreous GeO<sub>2</sub>. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Composition and chemical states of the plasma anodised film on Ge |
| Тип | paper |
| DOI | 10.1088/0022-3727/22/8/023 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 22 |
| Первая страница | 1169 |
| Последняя страница | 1173 |
| Аффилиация | Liu Chun-rong; Dept. of Phys., Anhui Univ., Hefei, China |
| Аффилиация | Liu Ling; Dept. of Phys., Anhui Univ., Hefei, China |
| Выпуск | 8 |
