Low-energy Ar⁺ ion bombardments (0.3 keV, 0-10 mA) at glancing angle (67 degrees from substrate normal) on RF magnetron sputtered MoS_2-x films give rise to a marked anisotropy in the plane parallel to the substrate. The (002) planes of all the crystallites align along the projected direction of irradiation. The electrical conductivity measurements show that the conductivity in the direction parallel to the projected direction of ion incidence is four times higher than that perpendicular, to the projected direction. The strong increase in conductivity in the bombarded films (up to four orders of magnitude) is due to the loss of stoichiometry of the films. The film growth mechanism is finally discussed.