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Автор C R Huang
Автор M C Lee
Автор Y S Chang
Автор C C Lin
Автор Y F Chao
Дата выпуска 1990-06-14
dc.description The amorphous silicon film, excited by a picosecond laser, has been investigated by a laser microprobe. The optical properties are measured simultaneously with its Raman spectrum. The sharp Raman peak of this properly annealed film is similar to that of crystalline silicon (c-Si) with a significant drop in reflection. A second pulse of proper fluence can reduce the Raman intensity and increase the transmission greatly and this is ascribed to explosive crystallisation and laser quenching. This reamorphisation phenomenon of the annealed film suggests a feasible method for erasable optical recording.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Optical and Raman correlation of laser recrystallised and quenched amorphous silicon film: a microprobe study
Тип paper
DOI 10.1088/0022-3727/23/6/016
Electronic ISSN 1361-6463
Print ISSN 0022-3727
Журнал Journal of Physics D: Applied Physics
Том 23
Первая страница 729
Последняя страница 734
Аффилиация C R Huang; Dept. of Laser Technol., Mech. Inst. Res. Lab., ITRI, Hsinchu, Taiwan
Аффилиация M C Lee; Dept. of Laser Technol., Mech. Inst. Res. Lab., ITRI, Hsinchu, Taiwan
Аффилиация Y S Chang; Dept. of Laser Technol., Mech. Inst. Res. Lab., ITRI, Hsinchu, Taiwan
Аффилиация C C Lin; Dept. of Laser Technol., Mech. Inst. Res. Lab., ITRI, Hsinchu, Taiwan
Аффилиация Y F Chao; Dept. of Laser Technol., Mech. Inst. Res. Lab., ITRI, Hsinchu, Taiwan
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