Автор |
C R Huang |
Автор |
M C Lee |
Автор |
Y S Chang |
Автор |
C C Lin |
Автор |
Y F Chao |
Дата выпуска |
1990-06-14 |
dc.description |
The amorphous silicon film, excited by a picosecond laser, has been investigated by a laser microprobe. The optical properties are measured simultaneously with its Raman spectrum. The sharp Raman peak of this properly annealed film is similar to that of crystalline silicon (c-Si) with a significant drop in reflection. A second pulse of proper fluence can reduce the Raman intensity and increase the transmission greatly and this is ascribed to explosive crystallisation and laser quenching. This reamorphisation phenomenon of the annealed film suggests a feasible method for erasable optical recording. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Optical and Raman correlation of laser recrystallised and quenched amorphous silicon film: a microprobe study |
Тип |
paper |
DOI |
10.1088/0022-3727/23/6/016 |
Electronic ISSN |
1361-6463 |
Print ISSN |
0022-3727 |
Журнал |
Journal of Physics D: Applied Physics |
Том |
23 |
Первая страница |
729 |
Последняя страница |
734 |
Аффилиация |
C R Huang; Dept. of Laser Technol., Mech. Inst. Res. Lab., ITRI, Hsinchu, Taiwan |
Аффилиация |
M C Lee; Dept. of Laser Technol., Mech. Inst. Res. Lab., ITRI, Hsinchu, Taiwan |
Аффилиация |
Y S Chang; Dept. of Laser Technol., Mech. Inst. Res. Lab., ITRI, Hsinchu, Taiwan |
Аффилиация |
C C Lin; Dept. of Laser Technol., Mech. Inst. Res. Lab., ITRI, Hsinchu, Taiwan |
Аффилиация |
Y F Chao; Dept. of Laser Technol., Mech. Inst. Res. Lab., ITRI, Hsinchu, Taiwan |
Выпуск |
6 |