| Автор | K C Sharma |
| Автор | R P Sharma |
| Автор | J C Garg |
| Дата выпуска | 1992-06-14 |
| dc.description | Polycrystalline thin films of Cu<sub>1-x</sub>Ag<sub>x</sub>Se (0<or=x<or=1) have been deposited by a 'solution growth' technique. As-deposited films have been annealed at different temperatures up to 500 K and the appearance of electrical conductivity has been observed. The electrical conductivity of annealed films shows an exponential dependence on temperature, and two thermal activation energies have been calculated. Excluding x=0, all the films displayed n-type conductivity. Carrier concentration, mobility and thermoelectric power measurements of these films have been carried out as a function of composition. X-ray analysis indicates that CuSe and AgSe films have a cubic crystal structure while films with 0.1<or=x<or=0.9 possess a tetragonal structure with axial ratio approximately 1.25. Films of stoichiometry 0.1<or=x<or=1 show both a direct and an indirect optical bandgap E<sub>g</sub> from 1.4 to 1.37 eV and from 1.19 to 0.99 eV respectively. Other parameters such as absorption coefficient alpha , refractive index n, dielectric constant epsilon , and extinction coefficient k have also been computed from reflectance and transmittance spectra. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Structural, electrical and optical properties of solution grown polycrystalline Cu<sub>1-x</sub>Ag<sub>x</sub>Se thin films |
| Тип | paper |
| DOI | 10.1088/0022-3727/25/6/021 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 25 |
| Первая страница | 1019 |
| Последняя страница | 1025 |
| Аффилиация | K C Sharma; Dept. of Phys., Rajasthan Univ., Jaipur, India |
| Аффилиация | R P Sharma; Dept. of Phys., Rajasthan Univ., Jaipur, India |
| Аффилиация | J C Garg; Dept. of Phys., Rajasthan Univ., Jaipur, India |
| Выпуск | 6 |
