CeO<sub>2</sub> films deposited by DC reactive magnetron sputtering
E K Hollmann; A G Zaitsev; V E Loginov; Y V Likholetov; E K Hollmann; Dept. of Electron & Ion Vacuum Technol., St. Petersburg Electrotech. Univ., Russia; A G Zaitsev; Dept. of Electron & Ion Vacuum Technol., St. Petersburg Electrotech. Univ., Russia; V E Loginov; Dept. of Electron & Ion Vacuum Technol., St. Petersburg Electrotech. Univ., Russia; Y V Likholetov; Dept. of Electron & Ion Vacuum Technol., St. Petersburg Electrotech. Univ., Russia
Журнал:
Journal of Physics D: Applied Physics
Дата:
1993-03-14
Аннотация:
The preparation of CeO<sub>2</sub> thin films on sapphire by DC reactive magnetron sputtering of metallic Ce target in an argon-oxygen mixed gas is reported. The resputtering of the film deposited facing the target track was observed. The films deposited far from the sputtering system axis exhibited well-oriented crystalline structure and a smooth surface that allows the utilization of these films as sub-layers for further thin film growth. No substantial diffusion of Al into the CeO<sub>2</sub> film was observed.
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