| Автор | E K Hollmann |
| Автор | A G Zaitsev |
| Дата выпуска | 1993-04-14 |
| dc.description | The effect of gas pressure and re-emission of sputtered species from the electrodes on the deposition rate of these species is considered theoretically. lt is shown that increase of gas pressure makes the deposition rate comparatively insensitive to re-emission of sputtered material from both electrodes. This provides the principal advantage for multi-component thin-film preparation. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Material transport in high-pressure diode sputtering |
| Тип | paper |
| DOI | 10.1088/0022-3727/26/4/028 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 26 |
| Первая страница | 711 |
| Последняя страница | 712 |
| Аффилиация | E K Hollmann; Dept. of Electron & Ion Vacuum Technol., Electr. Eng. Inst., St. Petersburg, Russia |
| Аффилиация | A G Zaitsev; Dept. of Electron & Ion Vacuum Technol., Electr. Eng. Inst., St. Petersburg, Russia |
| Выпуск | 4 |
