Автор |
R Chatterjee |
Автор |
S Asokan |
Автор |
S S K Titus |
Дата выпуска |
1994-12-14 |
dc.description |
The current-voltage characteristics and electrical switching behaviour of bulk As<sub>x</sub>Te<sub>100-x-y</sub>Se<sub>y</sub> glasses have been investigated over a wide composition range (25<or=x<or=60;10<or=y<or=25). Most of the glasses studied have been found to exhibit a current-controlled negative-resistance behaviour with memory. A sharp switching is observed in the glass of composition As<sub>50</sub>Te<sub>30</sub>Se<sub>20</sub>. A strong dependence of the switching fields on composition, which resembles the variation of crystallization temperatures with x, has been noticed. Further, a current pulse of 100 mA amplitude and 10 mu s duration is found to re-set the memory-switched As-Te-Se glasses to the original high-resistance state. The sample can be made to switch again, with +or-2% variation in the switching fields. This indicates the possible application of these materials in 'read mostly' memories. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Current-controlled negative-resistance behaviour and memory switching in bulk As-Te-Se glasses |
Тип |
paper |
DOI |
10.1088/0022-3727/27/12/025 |
Electronic ISSN |
1361-6463 |
Print ISSN |
0022-3727 |
Журнал |
Journal of Physics D: Applied Physics |
Том |
27 |
Первая страница |
2624 |
Последняя страница |
2627 |
Аффилиация |
R Chatterjee; Instrum. & Services Unit, Indian Inst. of Sci., Bangalore, India |
Аффилиация |
S Asokan; Instrum. & Services Unit, Indian Inst. of Sci., Bangalore, India |
Аффилиация |
S S K Titus; Instrum. & Services Unit, Indian Inst. of Sci., Bangalore, India |
Выпуск |
12 |