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Автор R Chatterjee
Автор S Asokan
Автор S S K Titus
Дата выпуска 1994-12-14
dc.description The current-voltage characteristics and electrical switching behaviour of bulk As<sub>x</sub>Te<sub>100-x-y</sub>Se<sub>y</sub> glasses have been investigated over a wide composition range (25<or=x<or=60;10<or=y<or=25). Most of the glasses studied have been found to exhibit a current-controlled negative-resistance behaviour with memory. A sharp switching is observed in the glass of composition As<sub>50</sub>Te<sub>30</sub>Se<sub>20</sub>. A strong dependence of the switching fields on composition, which resembles the variation of crystallization temperatures with x, has been noticed. Further, a current pulse of 100 mA amplitude and 10 mu s duration is found to re-set the memory-switched As-Te-Se glasses to the original high-resistance state. The sample can be made to switch again, with +or-2% variation in the switching fields. This indicates the possible application of these materials in 'read mostly' memories.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Current-controlled negative-resistance behaviour and memory switching in bulk As-Te-Se glasses
Тип paper
DOI 10.1088/0022-3727/27/12/025
Electronic ISSN 1361-6463
Print ISSN 0022-3727
Журнал Journal of Physics D: Applied Physics
Том 27
Первая страница 2624
Последняя страница 2627
Аффилиация R Chatterjee; Instrum. & Services Unit, Indian Inst. of Sci., Bangalore, India
Аффилиация S Asokan; Instrum. & Services Unit, Indian Inst. of Sci., Bangalore, India
Аффилиация S S K Titus; Instrum. & Services Unit, Indian Inst. of Sci., Bangalore, India
Выпуск 12

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