| Автор | O Savadogo |
| Автор | K C Mandal |
| Дата выпуска | 1994-05-14 |
| dc.description | A novel method to fabricate low-cost n-Sb<sub>2</sub>S<sub>3</sub>/p-Ge heterojunction solar cells by chemical deposition is reported. It has been observed that, in the case of n-Sb<sub>2</sub>S<sub>3</sub> films chemically deposited with silicotungstic acid on (111) oriented single-crystalline p-Ge and annealed, the heterojunction solar cell properties are considerably improved. Dark current-voltage (I-V) measurements (in the range 298-380 K) on n-Sb<sub>2</sub>S<sub>3</sub>/p-Ge and siligotuxngstic-acid-deposited n-Sb<sub>2</sub>S<sub>3</sub>/p-Ge heterojunction devices showed an increase in barrier height ( phi <sub>b</sub>) from 0.65 to 0.89 eV, a decrease in ideality factor (n) from 2.21 to 1.38 and in reverse saturation current density (J<sub>0</sub>) from 6.27*10<sup>-7</sup> to 3.8*10<sup>-9</sup> A cm<sup>-2</sup>. Capacitance-voltage (C-V) studies at 1 MHz showed higher values of phi <sub>b</sub> for the improved device. Under AM1 (air mass 1) illumination, the improved junction showed an efficiency ( eta ) of about 7.3% without any antireflection coating whereas the n-Sb<sub>2</sub>S<sub>3</sub> films deposited without silicotungstic acid on p-Ge showed eta approximately=2.4%. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Fabrication of low-cost n-Sb<sub>2</sub>S<sub>3</sub>/p-Ge heterojunction solar cells |
| Тип | paper |
| DOI | 10.1088/0022-3727/27/5/028 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 27 |
| Первая страница | 1070 |
| Последняя страница | 1075 |
| Аффилиация | O Savadogo; Dept. de Metall. et de Genie des Mater., Ecole Polytech., Montreal, Que., Canada |
| Аффилиация | K C Mandal; Dept. de Metall. et de Genie des Mater., Ecole Polytech., Montreal, Que., Canada |
| Выпуск | 5 |
