| Автор | M A Loyola de Oliveira |
| Автор | A George |
| Автор | G Michot |
| Дата выпуска | 1995-04-14 |
| dc.description | Dislocations emitted at crack tips in silicon are characterized by X-ray topography. It is shown that a controlled mixed mode of loading can be achieved in double-cantilever-beam samples thanks to warping of the crack and that activated slip systems are different when a mode III component is superimposed on the usual mode I component. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Dislocation emission at crack tips in silicon under mixed mode loading |
| Тип | paper |
| DOI | 10.1088/0022-3727/28/4A/007 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 28 |
| Первая страница | A38 |
| Последняя страница | A41 |
| Аффилиация | M A Loyola de Oliveira; Univ. Federal do Espirito Santo, Vitoria, Brazil |
| Аффилиация | A George; Univ. Federal do Espirito Santo, Vitoria, Brazil |
| Аффилиация | G Michot; Univ. Federal do Espirito Santo, Vitoria, Brazil |
| Выпуск | 4A |
