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Автор C Jardin
Автор B Canut
Автор S M M Ramos
Дата выпуска 1996-08-14
dc.description The luminescence of during and irradiation was measured in the 190 - 820 nm wavelength range. The luminescence evolution with the ion fluence exhibits two behaviours : (i) at low fluence, the amount of centres increases; (ii) at high fluences, these defects are completely (F centres) or partially ( centres) annihilated. This phenomenon results from two concomittant mechanisms : a conversion between F and defects and a destruction of both luminescent species resulting from the radiation-induced damage. By using a simple model we have determined the cross sections associated with creation and annihilation of the centres. The irradiated samples were also investigated by cathodoluminescence and Auger electron spectroscopy. A higher concentration of structural defects and centres is evidenced at the sample area previously irradiated by ions, leading to an unsteady regime of the surface potential under electron excitation.
Формат application.pdf
Издатель Institute of Physics Publishing
Название The luminescence of sapphire subjected to the irradiation of energetic hydrogen and helium ions
Тип paper
DOI 10.1088/0022-3727/29/8/002
Electronic ISSN 1361-6463
Print ISSN 0022-3727
Журнал Journal of Physics D: Applied Physics
Том 29
Первая страница 2066
Последняя страница 2070
Аффилиация C Jardin; Département de Physique des Matériaux (UMR CNRS 5586), Université Claude Bernard Lyon I, 69622 Villeurbanne Cedex, France
Аффилиация B Canut; Département de Physique des Matériaux (UMR CNRS 5586), Université Claude Bernard Lyon I, 69622 Villeurbanne Cedex, France
Аффилиация S M M Ramos; Département de Physique des Matériaux (UMR CNRS 5586), Université Claude Bernard Lyon I, 69622 Villeurbanne Cedex, France
Выпуск 8

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