Автор |
C Jardin |
Автор |
B Canut |
Автор |
S M M Ramos |
Дата выпуска |
1996-08-14 |
dc.description |
The luminescence of during and irradiation was measured in the 190 - 820 nm wavelength range. The luminescence evolution with the ion fluence exhibits two behaviours : (i) at low fluence, the amount of centres increases; (ii) at high fluences, these defects are completely (F centres) or partially ( centres) annihilated. This phenomenon results from two concomittant mechanisms : a conversion between F and defects and a destruction of both luminescent species resulting from the radiation-induced damage. By using a simple model we have determined the cross sections associated with creation and annihilation of the centres. The irradiated samples were also investigated by cathodoluminescence and Auger electron spectroscopy. A higher concentration of structural defects and centres is evidenced at the sample area previously irradiated by ions, leading to an unsteady regime of the surface potential under electron excitation. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
The luminescence of sapphire subjected to the irradiation of energetic hydrogen and helium ions |
Тип |
paper |
DOI |
10.1088/0022-3727/29/8/002 |
Electronic ISSN |
1361-6463 |
Print ISSN |
0022-3727 |
Журнал |
Journal of Physics D: Applied Physics |
Том |
29 |
Первая страница |
2066 |
Последняя страница |
2070 |
Аффилиация |
C Jardin; Département de Physique des Matériaux (UMR CNRS 5586), Université Claude Bernard Lyon I, 69622 Villeurbanne Cedex, France |
Аффилиация |
B Canut; Département de Physique des Matériaux (UMR CNRS 5586), Université Claude Bernard Lyon I, 69622 Villeurbanne Cedex, France |
Аффилиация |
S M M Ramos; Département de Physique des Matériaux (UMR CNRS 5586), Université Claude Bernard Lyon I, 69622 Villeurbanne Cedex, France |
Выпуск |
8 |