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Автор J A van Wyk
Автор E C Reynhardt
Автор G L High
Автор I Kiflawi
Дата выпуска 1997-06-21
dc.description Line widths and spin - spin relaxation times of P1 centres in synthetic Ib and natural Ia diamonds with concentrations of P1 and P2 centres covering the range 0.03 - 400 atomic parts per million have been measured. At concentrations higher than about ten atomic parts per million the line width is linearly dependent on the concentration. At lower concentrations the electron - dipolar contribution to the line width dominates and the width of the line remains constant. Since the pulse sequence employed for measurements eliminates the effects of inhomogeneous line broadening, of the line remains linearly dependent on the total paramagnetic impurity concentration, even at very low paramagnetic impurity concentrations.
Формат application.pdf
Издатель Institute of Physics Publishing
Название The dependences of ESR line widths and spin - spin relaxation times of single nitrogen defects on the concentration of nitrogen defects in diamond
Тип paper
DOI 10.1088/0022-3727/30/12/016
Electronic ISSN 1361-6463
Print ISSN 0022-3727
Журнал Journal of Physics D: Applied Physics
Том 30
Первая страница 1790
Последняя страница 1793
Выпуск 12

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