A comparison of electron emission obtained from low-resistance diamond thin films with various surface morphologies was performed. The films were deposited on Mo using microwave-plasma-enhanced chemical vapour deposition techniques. Ball-like and cauliflower-like diamond films, characterized by the presence of some diamond grains on graphitic balls, had a surface resistance (3 K to 10 M ) than that of relatively smooth continuous diamond films (20 - 140 M ). For all types of films, the turn-on field increased with increased surface resistance. The mean emission current density of 1.8 mA at a field of 4.6 V was obtained from a ball-like diamond film with an emitting area of . This indicates that these low-resistance films with ball-like surface morphologies can be good field-electron emitters. Field enhancement due to a `projection on a projection' geometry could be a partial explanation of our results.