| Автор | H N Wanka |
| Автор | M B Schubert |
| Дата выпуска | 1997-04-21 |
| dc.description | The etching of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon by hot tungsten filament generated atomic hydrogen has been investigated. Room-temperature etch rates of 27 Å for amorphous and 20 Å for microcrystalline silicon have been achieved. Boron doping decreases the etch rate, whereas phosphorus doping does not affect it. No surface roughening occurs, even for the highest a-Si:H etch rates. In the initial phase of the etch process, however, a bond structure modification arises close to the surface. An increase of microcrystalline silicon etch rates towards the substrate/film interface reflects the coalescence of the microcrystalline nuclei. Hot filament atomic hydrogen etching provides high etch rates of amorphous and polycrystalline silicon with a high selectivity against metals and thermal oxide. Due to its simple setup and control, this kind of hydrogen etching is very interesting for applications in semiconductor technology where F- or Cl-etchants are to be avoided. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | High silicon etch rates by hot filament generated atomic hydrogen |
| Тип | lett |
| DOI | 10.1088/0022-3727/30/8/002 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 30 |
| Первая страница | L28 |
| Последняя страница | L31 |
| Аффилиация | H N Wanka; Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany |
| Аффилиация | M B Schubert; Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany |
| Выпуск | 8 |
