| Автор | A Ulyanenkov |
| Автор | K Omote |
| Автор | R Matsuo |
| Автор | J Harada |
| Автор | S-Y Matsuno |
| Дата выпуска | 1999-06-21 |
| dc.description | In this investigation we apply the x-ray reflectivity and diffuse scattering measurements to study the interface and surface morphology and bulk properties of SiO<sub>2</sub> amorphous films grown on Si substrates. Three samples with different interface and surface roughnesses are analysed. Simultaneous fitting of both specular reflectivity and diffuse scattering curves allows the determination of precise values of surface and interface roughness, film thickness and bulk density of silicon dioxide films. The distorted-wave Born approximation is used for quantitative characterization of diffuse scattering from the samples. The structural parameters obtained by the x-ray method agree with atomic force microscopy results. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Specular and non-specular x-ray scattering study of SiO<sub>2</sub>/Si structures |
| Тип | paper |
| DOI | 10.1088/0022-3727/32/12/306 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 32 |
| Первая страница | 1313 |
| Последняя страница | 1318 |
| Выпуск | 12 |
