HgBr₂ single crystals were grown from the vapour by the moving vapour growth method. By optical spectroscopy measurements in the fundamental energy gap region the energy gap value at room temperature RT was determined, and by electrical measurements the energy levels inside the energy gap were resolved. Investigation of the crystals by a photoluminescence technique using a confocal laser scanning microscope using a Kr-Ar laser (488 nm/514 nm) confirmed the presence of internal inhomogeneities and gave information regarding the position and dimension of the impurity regions in the crystals.