| Автор | Jiro Nagao |
| Автор | Takeshi Shiino |
| Автор | Satoru Kikuchi |
| Автор | Tomomi Yoshimoto |
| Автор | Eiji Hatta |
| Автор | Koichi Mukasa |
| Дата выпуска | 1999-01-21 |
| dc.description | The structure of antimony and bismuth thin films grown on glass or Si(001) substrates by ionized cluster beam (ICB) deposition was characterized. X-ray diffraction measurements were carried out to investigate the structures of the films. The dependence of the crystalline orientation in antimony films grown on the glass substrate on the applied voltage was observed. With increasing applied voltage, the x-ray diffraction peaks from the planes become weak and those from the planes become relatively strong. In bismuth films deposited on the Si(001) substrate at , the dominant crystal face is the (012) plane. These results show that the crystalline orientation of antimony and bismuth films can be controlled well according to the applied voltage and substrates used in the ICB deposition. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Ionized cluster beam deposition of antimony and bismuth films |
| Тип | paper |
| DOI | 10.1088/0022-3727/32/2/010 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 32 |
| Первая страница | 134 |
| Последняя страница | 138 |
| Выпуск | 2 |
