This work reports the synthesis and electrical characterization of thin films of Bi₄Ti₃O₁₂ produced by an oxide-precursor method. The films were characterized using x-ray diffraction. At a temperature of 500-800 °C, Bi₄Ti₃O₁₂ films were successfully crystallized on Si and Pt/Si substrates. Electrical and ferroelectric properties of Bi₄Ti₃O₁₂ films were also obtained. The electrical properties reported include dielectric and capacitance-voltage (C-V) data. At a frequency of 100 kHz the measured dielectric constant and dissipation factor were 146 and 0.04, respectively, for films annealed at 700 °C for 2 h. C-V measurements of the Bi₄Ti₃O₁₂ films in metal-ferroelectric-metal configuration confirmed that ferroelectric domain switching occurred. Ferroelectricity was confirmed by P-E hysteresis loops with remanent a polarization and coercive field of 1.6 µC cm^-2 and 33.8 kV cm^-1, respectively.