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Автор S Ezhilvalavan
Автор Ming Shiahn Tsai
Автор Tseung Yuen Tseng
Автор Ming Shiahn Tsai
Дата выпуска 2000-05-21
dc.description The presence of defects in thin-film dielectrics often leads to dielectric relaxation as a function of frequency, in which the dielectric constant decreases and the loss tangent increases with increasing frequency. Dielectric relaxation results in charge storage capacity reduction under dynamic random access memory operating conditions. In this work, the dielectric relaxation behaviour of dc reactive sputtered Ta<sub>2</sub>O<sub>5</sub> thin film was investigated. Using dielectric dispersion measurements as a function of frequency (100 Hz≤f≤10 MHz) and temperature (27 °C≤T≤150 °C), we determined the dielectric relaxation and defect quantity of the films and propose an equivalent circuit on the basis of complex capacitance, admittance and impedance spectral studies.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Dielectric relaxation and defect analysis of Ta<sub>2</sub>O<sub>5</sub> thin films
Тип paper
DOI 10.1088/0022-3727/33/10/301
Electronic ISSN 1361-6463
Print ISSN 0022-3727
Журнал Journal of Physics D: Applied Physics
Том 33
Первая страница 1137
Последняя страница 1142
Аффилиация S Ezhilvalavan; Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu-300, Taiwan, Republic of China
Аффилиация Ming Shiahn Tsai; Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu-300, Taiwan, Republic of China
Аффилиация Tseung Yuen Tseng; Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu-300, Taiwan, Republic of China
Аффилиация Ming Shiahn Tsai; Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu-300, Taiwan, Republic of China
Выпуск 10

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