| Автор | N S Xu |
| Автор | Jun Chen |
| Автор | S Z Deng |
| Автор | K H Wu |
| Автор | E G Wang |
| Дата выпуска | 2000-07-07 |
| dc.description | Nitrogen containing nanocrystalline diamond films have been synthesized by microwave plasma enhanced chemical vapour deposition using N<sub>2</sub>/CH<sub>4</sub> as the reactant gas. The films prepared under different N<sub>2</sub>/CH<sub>4</sub> flow ratios were studied by scanning electron microscopy, transmission electron microscopy, x-ray diffraction and secondary ion mass spectroscopy. Their field emission characteristics, i.e. both the distribution of the emission sites and current-voltage characteristics, were recorded using a transparent anode technique. It was found that the grain size of films prepared under different conditions varies and has a relationship with their turn-on fields. A possible explanation is given, which proposes that nanocrystalline boundary induced defect states might affect the field emission characteristics. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Study of field electron emission from nanocrystalline diamond thin films grown from a N<sub>2</sub>/CH<sub>4</sub> microwave plasma |
| Тип | paper |
| DOI | 10.1088/0022-3727/33/13/302 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 33 |
| Первая страница | 1572 |
| Последняя страница | 1575 |
| Выпуск | 13 |
