| Автор | Nicolas Gherardi |
| Автор | Steve Martin |
| Автор | Françoise Massines |
| Дата выпуска | 2000-10-07 |
| dc.description | The aim of this work is to study the properties of a silicon-based deposit realized with a glow dielectric barrier discharge at atmospheric pressure in a nitrogen, silane and nitrous oxide mixture. It is shown that a continuous thin film can be realized. The chemical composition of the thin layer has been determined by x-ray photoelectron spectroscopy and static secondary ion mass spectrometry. The characteristics of the deposit are correlated to those of the discharge. The first steps of a chemical pathway leading to the precursors of the deposit are proposed from the analysis of the optical emission spectrum of the discharge. It appears that, unlike the low-pressure PECVD in a N<sub>2</sub>O-SiH<sub>4</sub> mixture, in an atmospheric-pressure glow discharge NO is the main oxidizing species, due to the action of the metastable nitrogen molecules. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A new approach to SiO<sub>2</sub> deposit using a N<sub>2</sub>-SiH<sub>4</sub>-N<sub>2</sub>O glow dielectric barrier-controlled discharge at atmospheric pressure |
| Тип | lett |
| DOI | 10.1088/0022-3727/33/19/102 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 33 |
| Первая страница | L104 |
| Последняя страница | L108 |
| Аффилиация | Nicolas Gherardi; Laboratoire de Génie Electrique, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse cedex, France |
| Аффилиация | Steve Martin; Laboratoire de Génie Electrique, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse cedex, France |
| Аффилиация | Françoise Massines; Laboratoire de Génie Electrique, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse cedex, France |
| Выпуск | 19 |
