| Автор | L Stagni |
| Дата выпуска | 1975-09-11 |
| dc.description | It is shown that the result found by Matsuoka et al (see abstr. A20445 of 1975) that there is no correlation between the carrier lifetime and the laser damage threshold of silicon crystals, can be understood in terms of the qualitative theory proposed by Bertolotti et al. (see abstr. A12647 of 1972). |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | On the role of carrier lifetime and surface recombination in the laser-induced damage of semiconductors |
| Тип | lett |
| DOI | 10.1088/0022-3727/8/13/001 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 8 |
| Первая страница | L155 |
| Последняя страница | L156 |
| Аффилиация | L Stagni; Istit. di Fisica, Univ. di Roma, Roma, Italy |
| Выпуск | 13 |
