Difficulties in observing direct optical excitation of Si-SiO<sub>2</sub> interface states
K Y Tong; Y W Lam; K Y Tong; Dept. of Electronics, Chinese Univ. of Hong Kong, Shatin, Hong Kong; Y W Lam; Dept. of Electronics, Chinese Univ. of Hong Kong, Shatin, Hong Kong
Журнал:
Journal of Physics D: Applied Physics
Дата:
1976-01-11
Аннотация:
The primary difficulty in the attempt to observe direct optical excitation of interface states in the Si-insulator system is the good thermal communication between the interface states and the two energy bands.
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