| Автор | J W Orton |
| Автор | A H M Kipperman |
| Автор | J A Beun |
| Дата выпуска | 1976-01-11 |
| dc.description | Electrical measurements on pressure contacts between pairs of semiconductor crystals are reported with a view to understanding the properties of grain-grain contacts in powdered semiconductors. The materials used were Ge and GaAs, their surfaces being prepared chemically and exposed to room atmosphere. It is thus necessary to consider three contributions to the contact resistance-bulk spreading resistance, oxide film resistance and semiconductor surface barrier effects. By studying the contact resistance, shape of current voltage curves and the a.c. impedance, and comparing semiconductor-semiconductor and semiconductor-metal contacts, the following conclusions were reached: (i) for GaAs and light doped n-Ge surface barrier effects are dominant; (ii) for lightly doped p-Ge bulk spreading resistance is probably the controlling factor; (iii) for heavily doped p-Ge and oxide resistance is important. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | An experimental study of the electrical properties of the contact between two similar semiconductor crystals |
| Тип | paper |
| DOI | 10.1088/0022-3727/9/1/013 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 9 |
| Первая страница | 69 |
| Последняя страница | 82 |
| Аффилиация | J W Orton; Tech. Hogeschool, Eindhoven, Netherlands |
| Аффилиация | A H M Kipperman; Tech. Hogeschool, Eindhoven, Netherlands |
| Аффилиация | J A Beun; Tech. Hogeschool, Eindhoven, Netherlands |
| Выпуск | 1 |
