| Автор | D M Corallo |
| Автор | D M Creek |
| Автор | G M Murray |
| Дата выпуска | 1980-06-01 |
| dc.description | A number of X-ray sensitive silicon p-i-n diodes have been spectrally calibrated between 1.5 and 17.4 keV using mechanically chopped fluorescent line radiation. The experimental procedures are described and the measurements of diode sensitivity are shown to fit a simple two thickness diode model. As the derived thicknesses generally differ from those quoted by the manufacturer, X-ray calibration is recommended for this type of diode. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The X-ray calibration of silicon p-i-n diodes between 1.5 and 17.4 keV |
| Тип | paper |
| DOI | 10.1088/0022-3735/13/6/008 |
| Print ISSN | 0022-3735 |
| Журнал | Journal of Physics E: Scientific Instruments |
| Том | 13 |
| Первая страница | 623 |
| Последняя страница | 626 |
| Аффилиация | D M Corallo; Atomic Weapons Res. Establ., Aldermaston, UK |
| Аффилиация | D M Creek; Atomic Weapons Res. Establ., Aldermaston, UK |
| Аффилиация | G M Murray; Atomic Weapons Res. Establ., Aldermaston, UK |
| Выпуск | 6 |
