Автор |
S Myhajlenko |
Автор |
W K Ke |
Дата выпуска |
1984-03-01 |
dc.description |
The technique of delayed coincidence has been used for the determination of cathodoluminescence lifetimes from various semiconductors. Results are presented of decay measurements performed on silicon (band-edge luminescence) and gallium arsenide (deep-level luminescence). These are 'materials systems' not usually associated with cathodoluminescence assessment techniques. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Time-resolved cathodoluminescence by delayed coincidence |
Тип |
paper |
DOI |
10.1088/0022-3735/17/3/009 |
Print ISSN |
0022-3735 |
Журнал |
Journal of Physics E: Scientific Instruments |
Том |
17 |
Первая страница |
200 |
Последняя страница |
203 |
Аффилиация |
S Myhajlenko; Dept. of Electrical Engng., Univ. of Manchester Inst. of Sci. & Technol., Manchester, UK |
Аффилиация |
W K Ke; Dept. of Electrical Engng., Univ. of Manchester Inst. of Sci. & Technol., Manchester, UK |
Выпуск |
3 |