| Автор | T J M Jongeling |
| Автор | W C Heerens |
| Дата выпуска | 1984-08-01 |
| dc.description | A description will be given of a new absolute capacitive thickness gauge for thin layers. The applied method, using a 'baseplate reference' measurement of the substate, followed by a 'layer on baseplate' measurement, enables an uncertainty in the layer thickness of 0.8 nm with a 95% confidence level. The method compensates for tilting of the electrode carriers and bending according to a pure even function of the substrate. A comparison is made of the performance of this capacitive gauge with the absolute optical layer thickness gauge, using phase compensation. In the beginning there were some problems with the preparation of compatible test layers. After solution of these problems the results of both independent methods showed only a small significant difference or no difference at all with layers of 25 nm up to 1400 nm. The capacitive gauge can be used directly for thickness measurements up to 80 mu m, while, due to the principle, the optical thickness gauge needs an indication of the nominal thickness expressed in the number of wavelengths. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The comparison of two absolute layer thickness gauges |
| Тип | paper |
| DOI | 10.1088/0022-3735/17/8/010 |
| Print ISSN | 0022-3735 |
| Журнал | Journal of Physics E: Scientific Instruments |
| Том | 17 |
| Первая страница | 664 |
| Последняя страница | 668 |
| Аффилиация | T J M Jongeling; Dept. of Appl. Phys., Delft Univ. of Technol., Delft, Netherlands |
| Аффилиация | W C Heerens; Dept. of Appl. Phys., Delft Univ. of Technol., Delft, Netherlands |
| Выпуск | 8 |
