| Автор | I F Nicolau |
| Дата выпуска | 1969-09-01 |
| dc.description | The construction of an open tube horizontal type reactor with interior heating produced by a tape-shaped resistance is described, which is intended to be used in laboratory work for silicon epitaxial growths by hydrogen reduction of silicon tetrachloride. The reactor is able to grow six 22 mm maximum diameter slices, with a thickness variation among the slices about the mean value of less than ±2·5%. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Interior resistance heated open tube epitaxial reactor |
| Тип | paper |
| DOI | 10.1088/0022-3735/2/9/306 |
| Print ISSN | 0022-3735 |
| Журнал | Journal of Physics E: Scientific Instruments |
| Том | 2 |
| Первая страница | 782 |
| Последняя страница | 784 |
| Аффилиация | I F Nicolau; Intreprinderea de Piese Radio si Semiconductori, Laboratorul de Semiconductori, Rumania |
| Выпуск | 9 |
