| Автор | S R Blight |
| Автор | R E Nicholls |
| Автор | S P S Sangha |
| Автор | P B Kirby |
| Автор | L Teale |
| Автор | S P Hiscock |
| Автор | C P Stewart |
| Дата выпуска | 1988-05-01 |
| dc.description | An automated Hall profiling system is described which enables the carrier concentration and mobility profiles of semiconductor layers to be obtained at both room and liquid nitrogen temperatures. The system uses chemical stripping of the layers and the differential Hall effect technique. As many semiconductor devices operate at 77 K, valuable information on the electrical properties of the material at this temperature can be obtained. Typical examples of this are presented for both the III-V and II-VI compound semiconductor systems. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Automated Hall profiling system for the characterisation of semiconductors at room and liquid nitrogen temperatures |
| Тип | paper |
| DOI | 10.1088/0022-3735/21/5/011 |
| Print ISSN | 0022-3735 |
| Журнал | Journal of Physics E: Scientific Instruments |
| Том | 21 |
| Первая страница | 470 |
| Последняя страница | 479 |
| Аффилиация | S R Blight; GEC Res. Ltd., Hirst Res. Centre, Wembley, UK |
| Аффилиация | R E Nicholls; GEC Res. Ltd., Hirst Res. Centre, Wembley, UK |
| Аффилиация | S P S Sangha; GEC Res. Ltd., Hirst Res. Centre, Wembley, UK |
| Аффилиация | P B Kirby; GEC Res. Ltd., Hirst Res. Centre, Wembley, UK |
| Аффилиация | L Teale; GEC Res. Ltd., Hirst Res. Centre, Wembley, UK |
| Аффилиация | S P Hiscock; GEC Res. Ltd., Hirst Res. Centre, Wembley, UK |
| Аффилиация | C P Stewart; GEC Res. Ltd., Hirst Res. Centre, Wembley, UK |
| Выпуск | 5 |
