| Автор | M J Lazarus |
| Автор | M P G Gibson |
| Автор | M Ryall |
| Дата выпуска | 1971-01-01 |
| dc.description | Measurements have been made with dual gate MOS field effect transistors when immersed in liquid nitrogen. It has been found that such devices are suitable for wideband and tuned rf amplifiers, with improved characteristics. Simple practical amplifier circuits and their characteristics are described. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Operation of dual gate MOS field effect transistors at 77 K and use in rf and video amplifiers |
| Тип | paper |
| DOI | 10.1088/0022-3735/4/1/015 |
| Print ISSN | 0022-3735 |
| Журнал | Journal of Physics E: Scientific Instruments |
| Том | 4 |
| Первая страница | 58 |
| Последняя страница | 60 |
| Аффилиация | M J Lazarus; Univ. Lancaster, UK |
| Аффилиация | M P G Gibson; Univ. Lancaster, UK |
| Аффилиация | M Ryall; Univ. Lancaster, UK |
| Выпуск | 1 |
