An ultralow noise preamplifier and bias supply for photoconductive infrared detectors
W G Gore; G W Smith; W G Gore; Atomic Weapons Res. Establ., Reading, UK; G W Smith; Atomic Weapons Res. Establ., Reading, UK
Журнал:
Journal of Physics E: Scientific Instruments
Дата:
1974-08-01
Аннотация:
An ultralow noise voltage preamplifier and bias current supply using field effect transistors is described which was designed for use with a cadmium mercury telluride photoconductive infrared detector. The noise measured at room temperature with a 51 Omega source impedance and a bandwidth from 8 Hz to 10 kHz was 2 mu V peak to peak.
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