| Автор | L Pavesi |
| Автор | M Henini |
| Автор | D Johnston |
| Автор | I Harrison |
| Дата выпуска | 1995-01-01 |
| dc.description | Hall and photoluminescence measurements of Si-doped Al<sub>0.3</sub>Ga<sub>0.7</sub>As samples grown by molecular beam epitaxy on high index surfaces are reported. These data are compared with structures grown on the conventional (100) orientation. All the samples measured in this work have been grown under identical conditions. For (100), (111)B and (311)B Al<sub>x</sub>Ga<sub>1-x</sub>As we found an n-type doping while for (111)A Al<sub>x</sub>Ga<sub>1-x</sub>As the doping was p-type. The growth parameters used are the optimum ones for (100) Al<sub>x</sub>Ga<sub>1-x</sub>As. Growth under these conditions does not produce high quality (111)A or (111)B Al<sub>x</sub>Ga<sub>1-x</sub>As. However, the (311)B Al<sub>x</sub>Ga<sub>1-x</sub>As samples show comparable characteristics to (100) Al<sub>x</sub>Ga<sub>1-x</sub>As samples. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A comparison of Si-doped (100), (111) A, (111) B and (311) B Al<sub>x</sub>Ga<sub>1-x</sub>As samples grown by molecular beam epitaxy |
| Тип | paper |
| DOI | 10.1088/0268-1242/10/1/008 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 10 |
| Первая страница | 49 |
| Последняя страница | 55 |
| Аффилиация | L Pavesi; Dipartimento di Fisica, Trento Univ., Italy |
| Аффилиация | M Henini; Dipartimento di Fisica, Trento Univ., Italy |
| Аффилиация | D Johnston; Dipartimento di Fisica, Trento Univ., Italy |
| Аффилиация | I Harrison; Dipartimento di Fisica, Trento Univ., Italy |
| Выпуск | 1 |
