| Автор | R P Seisyan |
| Автор | A V Kavokin |
| Автор | S I Kokhanovskii |
| Автор | A I Nesvizhskii |
| Автор | M E Sasin |
| Автор | M A Sinitzin |
| Автор | B S Yavich |
| Дата выпуска | 1995-05-01 |
| dc.description | The absorption and magnetoabsorption of a set of (In, Ga)As/GaAs quantum wells has been studied. The oscillatory structure of magnetoabsorption allows one to reconstruct the energy positions of the Landau levels of the HH1E1 and LH1E1 excitonic states, taking into account the exciton binding energies calculated variationally. We have found that the potential profile for light holes is nearly flat with small deviations towards the type II quantum well. Calculation taking account of a combined potential for light holes shows that the excitonic transitions associated with the light hole states remain spatially direct in the system under study due to the 'Coulomb well' effect (additional hole confinement in the Coulombic potential created by an electron). The oscillator strength of the transitions has been shown to be quite high, which is supported by the data available. Because of a rather high oscillator strength, one can expect the appearance of a doublet spectral structure of light-hole exciton absorption, which was formed by the second light-hole 'oscillatory' states in the combined quantum well potential. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The excitonic structure of absorption and magnetoabsorption spectra near the type I-II transition in strained (In, Ga)As/GaAs heterostructures |
| Тип | paper |
| DOI | 10.1088/0268-1242/10/5/007 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 10 |
| Первая страница | 611 |
| Последняя страница | 615 |
| Аффилиация | R P Seisyan; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia |
| Аффилиация | A V Kavokin; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia |
| Аффилиация | S I Kokhanovskii; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia |
| Аффилиация | A I Nesvizhskii; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia |
| Аффилиация | M E Sasin; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia |
| Аффилиация | M A Sinitzin; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia |
| Аффилиация | B S Yavich; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia |
| Выпуск | 5 |
