We study a novel surface superlattice structure formed by a honeycomb gate pattern on GaAs/AlGaAs heterostructures with a high-mobility two-dimensional electron gas. The hexagonal gate arrays, fabricated by electron beam lithography, had pitches as small as 150 nm, corresponding to hexagons with 87 nm between adjacent vertices. Magnetoresistance measurements show features which reflect the presence of the induced hexagonal superlattice potential.