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Автор Z X Jiang
Автор S R Ryu
Автор B D McCombe
Дата выпуска 1996-11-01
dc.description Results of recent far-infrared magnetospectroscopic studies of a series of GaAs/AlGaAs multiple-quantum-well samples with Si donors -doped both in the 20 nm well centres and in the 60 nm barrier centres are described. In the presence of excess electrons a strong singlet transition of the ions is observed, and one of the two predicted triplet transitions has been identified. At higher electron densities these transitions evolve continuously into blue-shifted singlet-like and triplet-like bound magnetoplasmon transitions. For the two highest-density samples the singlet-like transition exhibits clear discontinuous changes in slope versus field at integral Landau level filling factors (FFs). Plots of the difference in energy between the many-electron singlet-like transition and the singlet transition normalized by the high-field Coulomb energy versus FF, exhibit cusp-like behaviour at FFs 1 and 2 at 4.2 K for the highest density sample, and at 1 and 4/3 at 1.7 K for the lower density sample. The results at integral FFs are compared with recent theoretical calculations. These experiments indicate that controlled doping of a random array of donor ions can be used to probe the nature of many-electron states in confined systems.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Effect of donor impurities on far-infrared magnetospectroscopy of electrons in quasi-two-dimensional systems
Тип paper
DOI 10.1088/0268-1242/11/11S/027
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 11
Первая страница 1608
Последняя страница 1612
Аффилиация Z X Jiang; Department of Physics, SUNY at Buffalo, Buffalo, NY 14260, USA
Аффилиация S R Ryu; Department of Physics, SUNY at Buffalo, Buffalo, NY 14260, USA
Аффилиация B D McCombe; Department of Physics, SUNY at Buffalo, Buffalo, NY 14260, USA
Выпуск 11S

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