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Автор Chuan-Kui Wang
Автор K-F Berggren
Дата выпуска 1996-02-01
dc.description We have carried out a quantum mechanical calculation of the differential conductance of the double-bend channels defined by abrupt changes in geometry. The constriction has been connected to two semi-infinite two-dimensional electron gas regions, which serve as emitter and collector when a source - drain voltage is applied. We assume that the source - drain voltage has a symmetric drop along the double-bend quantum channel, and that the main drop occurs at the boundaries where the backscattering takes place. Our results show that the source - drain voltage strongly smears the resonant peaks in the differential conductance corresponding to the resonant tunnelling via the quasibound states below the first conductance plateau of the double-bend quantum channel. Our calculations also show that additional conductance quasiplateaus develop as the source - drain voltage is increased, and that the edges of the voltage-induced conductance quasiplateaus are shifted linearly with the applied source - drain voltage.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Nonlinear transport in a ballistic quantum channel modulated with a double-bend structure
Тип paper
DOI 10.1088/0268-1242/11/2/011
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 11
Первая страница 207
Последняя страница 213
Аффилиация Chuan-Kui Wang; Department of Physics and Measurement Technology, Linköping University, S-58183 Linköping, Sweden
Аффилиация K-F Berggren; Department of Physics and Measurement Technology, Linköping University, S-58183 Linköping, Sweden
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