| Автор | K I Nuttall |
| Автор | W Chen |
| Дата выпуска | 1996-03-01 |
| dc.description | A novel static induction phototransistor structure that incorporates p+ guard diffusions in the drain has been investigated using numerical simulation. The guard diffusions offer protection to the photosensitive gate and allow the transistor to support high blocking voltages without the need for gate bias, allowing the easy series connection of multiple devices. The work presents results on the expected breakdown voltage, switching and temperature behaviour of a typical example of the structure. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Numerical simulation study of a novel 400 V static induction phototransistor |
| Тип | paper |
| DOI | 10.1088/0268-1242/11/3/027 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 11 |
| Первая страница | 443 |
| Последняя страница | 454 |
| Аффилиация | K I Nuttall; Department of Electrical Engineering and Electronics, The University of Liverpool, Brownlow Hill, Liverpool L69 3BX, UK |
| Аффилиация | W Chen; Department of Electrical Engineering and Electronics, The University of Liverpool, Brownlow Hill, Liverpool L69 3BX, UK |
| Выпуск | 3 |
