| Автор | M S Daly |
| Автор | D M Symons |
| Автор | M Lakrimi |
| Автор | R J Nicholas |
| Автор | N J Mason |
| Автор | P J Walker |
| Дата выпуска | 1996-05-01 |
| dc.description | We have performed 4 K magnetotransport measurements on almost intrinsic InAs/GaSb multi quantum wells under hydrostatic pressure. Through careful configuration of the growth we are able to produce samples that have differing interface monolayers (either InSb or GaAs). Analysing the data to obtain the overlap Δ we find that InSb interface samples have an overlap 30 ± 10 meV larger than GaAs in good agreement with recent theoretical predictions. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Interface composition dependence of the band offset in InAs/GaSb |
| Тип | lett |
| DOI | 10.1088/0268-1242/11/5/001 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 11 |
| Первая страница | L823 |
| Последняя страница | L826 |
| Аффилиация | M S Daly; Clarendon Laboratory, Physics Department, University of Oxford, Parks Road, Oxford OX1 3PU, UK |
| Аффилиация | D M Symons; Clarendon Laboratory, Physics Department, University of Oxford, Parks Road, Oxford OX1 3PU, UK |
| Аффилиация | M Lakrimi; Clarendon Laboratory, Physics Department, University of Oxford, Parks Road, Oxford OX1 3PU, UK |
| Аффилиация | R J Nicholas; Clarendon Laboratory, Physics Department, University of Oxford, Parks Road, Oxford OX1 3PU, UK |
| Аффилиация | N J Mason; Clarendon Laboratory, Physics Department, University of Oxford, Parks Road, Oxford OX1 3PU, UK |
| Аффилиация | P J Walker; Clarendon Laboratory, Physics Department, University of Oxford, Parks Road, Oxford OX1 3PU, UK |
| Выпуск | 5 |
