| Автор | A Alvarez |
| Автор | M Avella |
| Автор | J Jiménez |
| Автор | M A González |
| Автор | R Fornari |
| Дата выпуска | 1996-06-01 |
| dc.description | The relation between photocurrent and iron distribution in as-grown bulk InP is studied on the basis of a theoretical model that considers the electronic transitions involving and electronic levels. The photocurrent contrast is thus analysed in terms of fluctuations in and . When studying the homogeneity of Fe-doped semi-insulating InP wafers by means of scanning extrinsic photocurrent microscopy, it is seen that inhomogeneity is mainly controlled by fluctuations of the neutral iron concentration . |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Photocurrent contrast in semi-insulating Fe-doped InP |
| Тип | paper |
| DOI | 10.1088/0268-1242/11/6/016 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 11 |
| Первая страница | 941 |
| Последняя страница | 946 |
| Выпуск | 6 |
