Formation of narrow channels using split back-gates defined by in situ focused ion beam lithography
N Iredale; E H Linfield; P D Rose; D A Ritchie; M Pepper; G A C Jones; N Iredale; University of Cambridge, Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, UK; E H Linfield; University of Cambridge, Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, UK; P D Rose; University of Cambridge, Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, UK; D A Ritchie; University of Cambridge, Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, UK; M Pepper; University of Cambridge, Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, UK; G A C Jones; University of Cambridge, Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, UK
Журнал:
Semiconductor Science and Technology
Дата:
1997-01-01
Аннотация:
We have fabricated high electron mobility transistors incorporating split back-gates using the technique of in situ focused ion beam lithography and molecular beam epitaxial regrowth. We show that it is possible to form quasi-ballistic channels by biasing the split back-gate and have succeeded in defining wires of 400 nm width. Application of a small perpendicular magnetic field has allowed us to demonstrate that boundary scattering in these devices is mostly specular, as for conventional structures fabricated with Schottky gates.
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