| Автор | T S Kamilov |
| Автор | B L Sadullaev |
| Автор | U Sh Ganiev |
| Автор | B T Kamilov |
| Дата выпуска | 1998-05-01 |
| dc.description | Experimental photocurrent-voltage characteristics of higher manganese silicide (HMS)--HMS and HMS--M structures have been analysed. The mechanism is considered of current flow under illumination with radiation. In the structures under study, the space-charge-limited-current (SCLC) mode is realized in the temperature interval 77-270 K, and photocurrent-voltage characteristics show regions of linear and quadratic dependence and a region of steep current rise. The high photosensitivity of these structures and the occurrence of SCLC is explained by (i) formation, in the subsurface region of Si diffusion-doped with manganese, of a contact layer of HSM injecting holes into silicon; and (ii) the fact that at low temperature the high-resistance base region of the structures illuminated with intrinsic radiation becomes a low-resistance conducting layer, and a transition layer in which the SCLC mode is realized is formed at the HMS- phase boundary. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | On the mechanism of appearance of space-charge-limited current in higher manganese silicide (HMS)--HMS and HMS--M structures |
| Тип | paper |
| DOI | 10.1088/0268-1242/13/5/009 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 13 |
| Первая страница | 496 |
| Последняя страница | 499 |
| Аффилиация | T S Kamilov; Institute of Aircraft, 12 Akhunbabaev str., Tashkent 700047, Uzbekistan |
| Аффилиация | B L Sadullaev; Institute of Aircraft, 12 Akhunbabaev str., Tashkent 700047, Uzbekistan |
| Аффилиация | U Sh Ganiev; Institute of Aircraft, 12 Akhunbabaev str., Tashkent 700047, Uzbekistan |
| Аффилиация | B T Kamilov; Institute of Aircraft, 12 Akhunbabaev str., Tashkent 700047, Uzbekistan |
| Выпуск | 5 |
