| Автор | B-B Li |
| Автор | F Huang |
| Автор | S-L Zhang |
| Автор | Y Gao |
| Автор | L Zhang |
| Дата выпуска | 1998-06-01 |
| dc.description | The stress distribution in poly-Si due to two-dimensional patterns was studied by micro-Raman spectroscopy. We found that the stress near the edge of the patterns was different from that in the centre of the patterns. The directions are opposite to each other in these two regions. We also found that smaller or deeper layers of cause larger stress. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Micro-Raman spectroscopic study of two-dimensional stress distribution in poly-Si induced by patterns |
| Тип | paper |
| DOI | 10.1088/0268-1242/13/6/016 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 13 |
| Первая страница | 634 |
| Последняя страница | 636 |
| Выпуск | 6 |
