| Автор | G M Dunn |
| Автор | R Ghin |
| Автор | G J Rees |
| Автор | J P R David |
| Автор | S Plimmer |
| Автор | D C Herbert |
| Дата выпуска | 1999-11-01 |
| dc.description | We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk Al<sub>x</sub>Ga<sub>1-x</sub>As and also submicron p<sup>+</sup>in<sup>+</sup> diodes for x40%. The calculated impact ionization rates in bulk Al<sub>x</sub>Ga<sub>1-x</sub>As compared well with previous experiments and the electron- and hole-initiated current multiplication characteristics of the p<sup>+</sup>in<sup>+</sup> diodes were found to agree very well with our experimental results for both the analytical and the numerical models. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p<sup>+</sup>in<sup>+</sup> diodes |
| Тип | paper |
| DOI | 10.1088/0268-1242/14/11/309 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 14 |
| Первая страница | 994 |
| Последняя страница | 1000 |
| Выпуск | 11 |
