Photoelectric properties of (HMS)-SiMn-M structures, where HMS is higher manganese silicide formed in diffusion doping of silicon with manganese and M is metal contact, have been studied in a wide range of temperatures and light wavelengths. After illumination of these structures with h = 1.12 eV light at T = 77 K is terminated, the photocurrent decays back to the dark current in a complicated manner, following a curve with two regions. The duration of decay is about several seconds and more than 10⁵ s in the first and second regions, respectively. Deep infrared (IR) and temperature quenching of photoconductivity in these structures have been studied. Under illumination with h1.12 eV light and at low temperatures these structures can be considered HMS-i-p-M structures, with the i-region playing essential role in the generation of space-charge-limited currents (SCLC). Breakdown of the SCLC mode in these structures by ionization of manganese levels with extra IR light (h = 0.42-0.6 eV) or by heating results in a sharp decrease of the photocurrent flowing through the structures (especially in the case of temperature quenching in a narrow temperature range T = 15-20 K).