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Автор T Y Lin
Автор J C Fan
Автор Y F Chen
Дата выпуска 1999-05-01
dc.description Results of photoluminescence and photoconductivity measurements in epitaxial films are presented. The photoluminescence peak energy and intensity show several anomalous behaviours. The peak energy changes with temperature exhibiting an inverted S-shape dependence, where it decreases, then increases with increasing temperature in the range 40-100 K and finally decreases with increasing temperature. The intensity shows a temperature dependence similar to that of amorphous semiconductors and disordered superlattices. A blue shift of the photoluminescence energy with increasing excitation intensity is observed. A large Stokes shift between the photoluminescence peak position and the band edge transition energy is found; it decreases with decreasing indium content. A persistent photoconductivity effect has been detected up to room temperature with a stretched-exponential function for its decay rate. All these observations can be explained in a consistent way by alloy potential fluctuations, and these clearly indicate the existence of compositional fluctuations. These two related effects thus appear to constitute the mechanism for the widely observed localized excitons in InGaN-based devices.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Effects of alloy potential fluctuations in InGaN epitaxial films
Тип paper
DOI 10.1088/0268-1242/14/5/006
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 14
Первая страница 406
Последняя страница 411
Аффилиация T Y Lin; Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China
Аффилиация J C Fan; Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China
Аффилиация Y F Chen; Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China
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