| Автор | J H Schön |
| Автор | V Alberts |
| Автор | E Bucher |
| Дата выпуска | 1999-07-01 |
| dc.description | In this study, we investigated the dominating intrinsic defect levels in CuInSe<sub>2</sub> by means of temperature- and excitation-dependent steady-state photoluminescence (PL). The polycrystalline thin films were prepared by rapid thermal treatment of metallic alloys in H<sub>2</sub>Se-Ar. Attention was mainly focused on the influence of post-growth treatments (in Ar-H<sub>2</sub> and O<sub>2</sub>) on the defect structure of these films. The PL spectra of slightly In-rich as-grown films were dominated by a donor-acceptor pair transition at 0.92 eV. The defect levels are ascribed to V<sub>Cu</sub> and V<sub>Se</sub> and their activation energies have been determined to be 45 and 95 meV, respectively. Post-growth treatment in Ar-H<sub>2</sub> resulted in a shift of these peaks to higher energies and a significant increase in the intensity. In contrast, annealing in O<sub>2</sub> resulted in a shift of the peak to lower energies and to a dramatic reduction in intensity, compared with the as-grown samples. These effects were also found to be reversible. The change of the PL spectra on oxygen and hydrogen annealing is explained by the change of the density of V<sub>Se</sub> defects. This is explained by a model in which oxygen can occupy a V<sub>Se</sub> site owing to coordinatively unsaturated In at the grain boundaries. The V<sub>Se</sub> concentration and therefore the device quality of these CuInSe<sub>2</sub> thin films can thus be controlled either by a post-growth annealing step or during the growth process itself. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Control and passivation of V<sub>Se</sub> defect levels in H<sub>2</sub> Se-selenized CuInSe<sub>2</sub> thin films |
| Тип | paper |
| DOI | 10.1088/0268-1242/14/7/312 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 14 |
| Первая страница | 657 |
| Последняя страница | 659 |
| Выпуск | 7 |
