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Автор M S Jeong
Автор O H Cha
Автор X L Huang
Автор J Y Kim
Автор E-K Suh
Автор H J Lee
Дата выпуска 2000-02-01
dc.description The photoelectric transient process of a 99 period Si<sub>0.823</sub> Ge<sub>0.177</sub> (17 Å)/Si(24 Å) superlattice (SL) was investigated by the photocurrent decay (PCD) method. Decay lifetimes of electrons and holes in SL and Si capping layers are extracted from the transient intensity and polarity of the PCD signal. The temperature and bias dependences of lifetime exhibit the thermal activation of heavy holes, the dissociation of free excitons and the thermal activations of shallow and deep levels. The heavy holes hop in and out of the well at low temperature and weak electric field, while they jump over the well region in a strong electric field or at high temperature. Lifetimes of electrons and holes are nearly the same in the Si capping layer, while the lifetime of holes is about one order of magnitude longer than that of electrons in the SL, mainly due to the quantum confinement of holes in the SL region.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Photoelectric transient process in Si<sub>1- x</sub>Ge<sub>x</sub>/Si superlattices
Тип paper
DOI 10.1088/0268-1242/15/2/309
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 15
Первая страница 130
Последняя страница 134
Аффилиация M S Jeong; Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Republic of Korea
Аффилиация O H Cha; Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Republic of Korea
Аффилиация X L Huang; Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Republic of Korea
Аффилиация J Y Kim; Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Republic of Korea
Аффилиация E-K Suh; Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Republic of Korea
Аффилиация H J Lee; Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Republic of Korea
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