| dc.description |
Complementary capacitance and charge deep-level transient spectroscopy (DLTS) spectra of Cr-implanted 4H-SiC(n) Schottky diodes were measured to verify the predicted spatial sensitivities of the two methods. The magnitude of the peak of the dominant 0.73 eV Cr-related defect level was taken as a measure of the spatial sensitivity, while analysing the capacitance and charge DLTS signals in terms of the internal and external released charges, respectively. The amounts of the respective internal and external charges were found to be equal at the crossover point x<sub>c</sub> between the dominant emitting level and the bulk Fermi level, the crossover being positioned by the applied quiescent bias at a depth where x<sub>c</sub> /w 0.5, w standing for the width of the depletion region. This is exactly the value forecast by state-of-the-art theory. Finally, the only significant difference between the trap density profiles N<sub>T</sub> (x ), as reconstructed from the two complementary DLTS techniques, was found close to the maximum accessible depth x . |
