| Автор | D J Eagle |
| Автор | W I Milne |
| Дата выпуска | 1987-01-01 |
| dc.description | The low-temperature annealing properties of deposited silicon oxide films in wet N<sub>2</sub> have been explored. It has been found that the interfacial properties of MOS structures are optimised by a 400 degrees C anneal, but temperatures around 600 degrees C are required for the physical properties of the oxides to be substantially altered. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Low-temperature annealing of deposited silicon oxide films |
| Тип | paper |
| DOI | 10.1088/0268-1242/2/1/008 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 2 |
| Первая страница | 56 |
| Последняя страница | 59 |
| Аффилиация | D J Eagle; Dept. of Eng., Cambridge Univ., UK |
| Аффилиация | W I Milne; Dept. of Eng., Cambridge Univ., UK |
| Выпуск | 1 |
